IndiumV3, Main, Repository, bibRecord, 010087

Million-atom molecular dynamics simulation of flat InAs overlayers with self-limiting thickness on GaAs square nanomesas

Identifieur interne : 010087 ( Main/Repository ); précédent : 010086; suivant : 010088

Million-atom molecular dynamics simulation of flat InAs overlayers with self-limiting thickness on GaAs square nanomesas

Auteurs : RBID : Pascal:01-0238411

Descripteurs français

Pascal (Inist)
- 6835C, 6146, 6225, 6860B, 6835G, 6843, Etude théorique, Simulation ordinateur, Indium composé, Gallium arséniure, Semiconducteur III-V, Nanomatériau, Hétérojonction semiconducteur, Calcul dynamique moléculaire, Structure interface, Contrainte interne, Paramètre cristallin, Couche adsorbée.

English descriptors

KwdEn :
- Adsorbed layers, Computerized simulation, Gallium arsenides, III-V semiconductors, Indium compounds, Interface structure, Internal stresses, Lattice parameters, Molecular dynamics calculations, Nanostructured materials, Semiconductor heterojunctions, Theoretical study.

Abstract

Large-scale molecular dynamics simulations are performed to investigate the mechanical stresses in InAs/GaAs nanomesas with {101}-type sidewalls. The in-plane lattice constant of InAs layers parallel to the InAs/GaAs(001) interface starts to exceed the InAs bulk value at the twelfth monolayer (ML) and the hydrostatic stresses in InAs layers become tensile above ∼12 ML. As a result, it is not favorable to have InAs overlayers thicker than 12 ML. This may explain the experimental findings of the growth of flat InAs overlayers with self-limiting thickness of ∼11 ML on GaAs nanomesas. © 2001 American Institute of Physics.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 011196

Links to Exploration step

Pascal:01-0238411

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Million-atom molecular dynamics simulation of flat InAs overlayers with self-limiting thickness on GaAs square nanomesas</title>
<author><name sortKey="Su, Xiaotao" uniqKey="Su X">Xiaotao Su</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Concurrent Computing Laboratory for Materials Simulations, Biological Computation and Visualization Center, Department of Physics and Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge, Louisiana 70803</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Louisiane</region>
</placeName>
<wicri:cityArea>Concurrent Computing Laboratory for Materials Simulations, Biological Computation and Visualization Center, Department of Physics and Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge</wicri:cityArea>
</affiliation>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Photonic Materials and Devices Laboratory, Department of Materials Science and Department of Physics, University of Southern California, Los Angeles, California 90089</s1>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Californie</region>
</placeName>
<wicri:cityArea>Photonic Materials and Devices Laboratory, Department of Materials Science and Department of Physics, University of Southern California, Los Angeles</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Kalia, Rajiv K" uniqKey="Kalia R">Rajiv K. Kalia</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Concurrent Computing Laboratory for Materials Simulations, Biological Computation and Visualization Center, Department of Physics and Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge, Louisiana 70803</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Louisiane</region>
</placeName>
<wicri:cityArea>Concurrent Computing Laboratory for Materials Simulations, Biological Computation and Visualization Center, Department of Physics and Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Nakano, Aiichiro" uniqKey="Nakano A">Aiichiro Nakano</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Concurrent Computing Laboratory for Materials Simulations, Biological Computation and Visualization Center, Department of Physics and Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge, Louisiana 70803</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Louisiane</region>
</placeName>
<wicri:cityArea>Concurrent Computing Laboratory for Materials Simulations, Biological Computation and Visualization Center, Department of Physics and Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Vashishta, Priya" uniqKey="Vashishta P">Priya Vashishta</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Concurrent Computing Laboratory for Materials Simulations, Biological Computation and Visualization Center, Department of Physics and Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge, Louisiana 70803</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Louisiane</region>
</placeName>
<wicri:cityArea>Concurrent Computing Laboratory for Materials Simulations, Biological Computation and Visualization Center, Department of Physics and Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Madhukar, Anupam" uniqKey="Madhukar A">Anupam Madhukar</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Concurrent Computing Laboratory for Materials Simulations, Biological Computation and Visualization Center, Department of Physics and Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge, Louisiana 70803</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Louisiane</region>
</placeName>
<wicri:cityArea>Concurrent Computing Laboratory for Materials Simulations, Biological Computation and Visualization Center, Department of Physics and Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge</wicri:cityArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">01-0238411</idno>
<date when="2001-06-04">2001-06-04</date>
<idno type="stanalyst">PASCAL 01-0238411 AIP</idno>
<idno type="RBID">Pascal:01-0238411</idno>
<idno type="wicri:Area/Main/Corpus">011196</idno>
<idno type="wicri:Area/Main/Repository">010087</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0003-6951</idno>
<title level="j" type="abbreviated">Appl. phys. lett.</title>
<title level="j" type="main">Applied physics letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Adsorbed layers</term>
<term>Computerized simulation</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Interface structure</term>
<term>Internal stresses</term>
<term>Lattice parameters</term>
<term>Molecular dynamics calculations</term>
<term>Nanostructured materials</term>
<term>Semiconductor heterojunctions</term>
<term>Theoretical study</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>6835C</term>
<term>6146</term>
<term>6225</term>
<term>6860B</term>
<term>6835G</term>
<term>6843</term>
<term>Etude théorique</term>
<term>Simulation ordinateur</term>
<term>Indium composé</term>
<term>Gallium arséniure</term>
<term>Semiconducteur III-V</term>
<term>Nanomatériau</term>
<term>Hétérojonction semiconducteur</term>
<term>Calcul dynamique moléculaire</term>
<term>Structure interface</term>
<term>Contrainte interne</term>
<term>Paramètre cristallin</term>
<term>Couche adsorbée</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Large-scale molecular dynamics simulations are performed to investigate the mechanical stresses in InAs/GaAs nanomesas with {101}-type sidewalls. The in-plane lattice constant of InAs layers parallel to the InAs/GaAs(001) interface starts to exceed the InAs bulk value at the twelfth monolayer (ML) and the hydrostatic stresses in InAs layers become tensile above ∼12 ML. As a result, it is not favorable to have InAs overlayers thicker than 12 ML. This may explain the experimental findings of the growth of flat InAs overlayers with self-limiting thickness of ∼11 ML on GaAs nanomesas. © 2001 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0>
</fA01>
<fA02 i1="01"><s0>APPLAB</s0>
</fA02>
<fA03 i2="1"><s0>Appl. phys. lett.</s0>
</fA03>
<fA05><s2>78</s2>
</fA05>
<fA06><s2>23</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Million-atom molecular dynamics simulation of flat InAs overlayers with self-limiting thickness on GaAs square nanomesas</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>SU (Xiaotao)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>KALIA (Rajiv K.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>NAKANO (Aiichiro)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>VASHISHTA (Priya)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>MADHUKAR (Anupam)</s1>
</fA11>
<fA14 i1="01"><s1>Concurrent Computing Laboratory for Materials Simulations, Biological Computation and Visualization Center, Department of Physics and Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge, Louisiana 70803</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Photonic Materials and Devices Laboratory, Department of Materials Science and Department of Physics, University of Southern California, Los Angeles, California 90089</s1>
</fA14>
<fA20><s1>3717-3719</s1>
</fA20>
<fA21><s1>2001-06-04</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>10020</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2001 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>01-0238411</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied physics letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Large-scale molecular dynamics simulations are performed to investigate the mechanical stresses in InAs/GaAs nanomesas with {101}-type sidewalls. The in-plane lattice constant of InAs layers parallel to the InAs/GaAs(001) interface starts to exceed the InAs bulk value at the twelfth monolayer (ML) and the hydrostatic stresses in InAs layers become tensile above ∼12 ML. As a result, it is not favorable to have InAs overlayers thicker than 12 ML. This may explain the experimental findings of the growth of flat InAs overlayers with self-limiting thickness of ∼11 ML on GaAs nanomesas. © 2001 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H35C</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60A46</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60B20</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B60H60B</s0>
</fC02>
<fC02 i1="05" i2="3"><s0>001B60H35G</s0>
</fC02>
<fC02 i1="06" i2="3"><s0>001B60H35</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>6835C</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>6146</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>6225</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>6860B</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>6835G</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>6843</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Etude théorique</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Theoretical study</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Simulation ordinateur</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Computerized simulation</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Nanomatériau</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Nanostructured materials</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Hétérojonction semiconducteur</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Semiconductor heterojunctions</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Calcul dynamique moléculaire</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Molecular dynamics calculations</s0>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Structure interface</s0>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Interface structure</s0>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Contrainte interne</s0>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Internal stresses</s0>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Paramètre cristallin</s0>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Lattice parameters</s0>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Couche adsorbée</s0>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Adsorbed layers</s0>
</fC03>
<fN21><s1>162</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0123M000116</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 010087 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 010087 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:01-0238411
   |texte=   Million-atom molecular dynamics simulation of flat InAs overlayers with self-limiting thickness on GaAs square nanomesas
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Million-atom molecular dynamics simulation of flat InAs overlayers with self-limiting thickness on GaAs square nanomesas

Million-atom molecular dynamics simulation of flat InAs overlayers with self-limiting thickness on GaAs square nanomesas

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri